Renesas Electronics Corp. 2SA1978-T1B-A | 搜芯易Sourcengine

Renesas Electronics Corp. 2SA1978-T1B-A

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
2SA1978 - PNP EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIER
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Power Gain-Min (Gp) (dB)
8
DC Current Gain-Min (hFE)
20
Power Dissipation-Max (W)
0.2
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.05
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
12
Power Dissipation Ambient-Max (W)
0.2
Collector-base Capacitance-Max (pF)
1
Transition Frequency-Nom (fT) (MHz)
5500