Renesas Electronics Corp. 2N7286R3 | 搜芯易Sourcengine

Renesas Electronics Corp. 2N7286R3

生命周期状态
Active-Unconfirmed
REACH
REACH compliant
说明
Power Field-Effect Transistor, 12A I(D), 200V, 0.255ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XSFM-P3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-257AA
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
75
Drain Current-Max (ID) (A)
12
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
274
DS Breakdown Voltage-Min (V)
200
Turn-off Time-Max (toff) (ns)
400
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
36
Drain-source On Resistance-Max (ohm)
0.255
Screening Level / Reference Standard
RH - 100K Rad(Si)