Texas Instruments Incorporated 2N5877 | 搜芯易Sourcengine

Texas Instruments Incorporated 2N5877

生命周期状态
Discontinued
说明
Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-MBFM-P2
Configuration
SINGLE
JEDEC-95 Code
TO-3
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
Case Connection
COLLECTOR
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
NPN
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
5
Operating Temperature-Max
200 Cel
Collector Current-Max (IC)
8 A
Power Dissipation-Max (Abs)
150 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
60 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Transition Frequency-Nom (fT)
4 MHz
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED