Texas Instruments Incorporated 2N3999 | 搜芯易Sourcengine

Texas Instruments Incorporated 2N3999

生命周期状态
Discontinued
说明
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-MUPM-D3
Configuration
SINGLE
JEDEC-95 Code
TO-111
Package Shape
ROUND
Package Style
POST/STUD MOUNT Meter
Surface Mount
NO
Terminal Form
SOLDER LUG
Case Connection
COLLECTOR
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
NPN
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
60
Operating Temperature-Max
175 Cel
Collector Current-Max (IC)
5 A
Power Dissipation-Max (Abs)
2 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
80 V
Transition Frequency-Nom (fT)
40 MHz