Texas Instruments Incorporated 2N3263 | 搜芯易Sourcengine

Texas Instruments Incorporated 2N3263

生命周期状态
Discontinued
说明
Power Bipolar Transistor, 25A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-CRDB-G3
Configuration
SINGLE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
20
Operating Temperature-Max
175 Cel
Collector Current-Max (IC)
25 A
Power Dissipation-Max (Abs)
83 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
90 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Transition Frequency-Nom (fT)
20 MHz
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED