Texas Instruments Incorporated 2N3114 | 搜芯易Sourcengine

Texas Instruments Incorporated 2N3114

生命周期状态
Discontinued
说明
RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-39
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-MBCY-W3
Configuration
SINGLE
JEDEC-95 Code
TO-39
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
Case Connection
COLLECTOR
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
15
Operating Temperature-Max
200 Cel
Collector Current-Max (IC)
0.2 A
Power Dissipation-Max (Abs)
0.8 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
150 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Transition Frequency-Nom (fT)
40 MHz
Collector-base Capacitance-Max
9 pF
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED