GTE MICROCIRCUITS 2114-3CA | 搜芯易Sourcengine

GTE MICROCIRCUITS 2114-3CA

生命周期状态
Transferred
说明
Standard SRAM, 1KX4, 300ns, MOS, CDIP18
类别
Semiconductors Memory ICs SRAMs STANDARD SRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
MOS
JESD-30 Code
R-XDIP-T18
Memory Width
4
Package Code
DIP
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e0
Memory IC Type
STANDARD SRAM
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Memory Organization
1KX4
Number of Terminals
18
Terminal Pitch (mm)
2.54
Access Time-Max (ns)
300
Number of Words Code
1K
Memory Density (bits)
4096
Package Body Material
CERAMIC
Output Characteristics
3-STATE
Supply Voltage-Nom (V)
5
Number of Words (words)
1024
Package Equivalence Code
DIP18,.3
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0