ASI Semiconductor, Inc. 1N2927 | 搜芯易Sourcengine

ASI Semiconductor, Inc. 1N2927

生命周期状态
Active
说明
Tunnel Diode, 0.6V V(F) @Ipeak, 0.1mA Ipeak, Germanium, TO-18
类别
Semiconductors Diodes Microwave Special Purpose Diodes TUNNEL DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.60
SB Code
8541.10.00.60

Diode Type
TUNNEL DIODE
Technology
TUNNEL
JESD-30 Code
O-MBCY-W3
Configuration
SINGLE
JEDEC-95 Code
TO-18
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Diode Element Material
GERMANIUM
Forward Voltage-Max (V)
0.6
Diode Capacitance-Max (pF)
80
Peak Point Voltage-Max (V)
0.075
Peak Point Current-Max (mA)
0.1
Valley Point Voltage-Max (V)
0
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-65
Diode Forward Resistance-Max (ohm)
10