RF Small Signal Field-Effect Transistors

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET

RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET

RF Small Signal Field-Effect Transistor, 1-Element, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET

RF Power Transistor, 1.2 to 1.4 GHz, 500 W, 17 dB, 50 V, SOT539A, LDMOS

Trans RF FET N-CH 25V Si 3-Pin TO-92 Box

JFET sot23 nch jfet

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Transistor, 1.93 to 1.995 GHz, 630 W, 15.5 dB, 30 V, SOT1258-4, LDMOS

RF Power Transistor, 2.7 to 3.1 GHz, 200 W, 14 dB, 32 V, SOT1270-1, LDMOS

RF Power Transistor, 2.496 to 2.69 GHz, 400 W, 14.7 dB, 28 V, SOT1258-4, LDMOS

RF Power Transistor, 1.805 to 1.88 GHz, 400 W, 16.2 dB, 32 V, SOT1258-7, LDMOS

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-72

RF Power Transistor, 0.96 to 1.215 GHz, 700 W, 20 dB, 50 V, SOT502A, LDMOS

RF Small Signal Field-Effect Transistor

RF Power Transistor, 0.90 to 0.93 GHz, 500 W, 19.5 dB, 50 V, SOT502B, LDMOS

RF Power Transistor, 2.7 to 3.5 GHz, 50 W, 12 dB, 32 V, SOT1135A, LDMOS

RF Small Signal Field-Effect Transistor, N-Channel

RF Power Transistor, 0.96 to 1.215 GHz, 700 W, 20 dB, 50 V, SOT502E, LDMOS

RF Power Transistor, 2.3 to 2.7 GHz, 50 W, 29 dB, 28 V, SOT502, LDMOS

BLF2324M8LS200PU