RF Power Field-Effect Transistors

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

60-W; 3100 – 3500-MHz; 28-V GaN HEMT

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET

15-W; 28-V; GaN HEMT for Linear Communications ranging from VHF to 3 GHz

25-W RF Power GaN HEMT

25-W RF Power GaN HEMT

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET

RF MOSFET HEMT 28V 440199

30W GAN HEMT 28V 6.0GHZ FLANGE

6-W RF Power GaN HEMT

6-W RF Power GaN HEMT; Plastic

50-W; DC – 4.0-GHz; 50-V; GaN HEMT

100-W; DC CGHV40100 3-GHz; 50-V; GaN HEMT

100-W; DC CGHV40100 3-GHz; 50-V; GaN HEMT

70-W; 4500 to 5900-MHz; internally matched GaN HEMT for C-Band Radar Systems

500-W; 2700 to 3100-MHz; 50-Ohm Input/Output-Matched GaN HEMT for S-Band Radar Systems

150W, GAN HEMT, 50V, 2.9-3.5GHZ,

30W, GAN HEMT, 50V, DC-6.0GHZ, P

TRANSISTOR,MOSFET,10W,28V,2-175M

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET