RF Power Field-Effect Transistors

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET

30-W; 5500 – 5800-MHz; 28-V; GaN HEMT for WiMAX

30 W; DC - 6.0 GHz; GaN HEMT

RF MOSFET HEMT 50V 440117

500-W; 1200 – 1400-MHz; GaN HEMT for L-Band Radar Systems

50W, GAN HEMT, 50V, DC-4.0GHZ, P

50-W; 7.9 – 9.6-GHz; 50-ohm; Input/Output-Matched GaN HEMT

2-W; 20-MHz – 6000-MHz; GaN HEMT MMIC Power Amplifier

SMALL SIGNAL BIPOLAR TRANSISTOR

RF Power Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF SMALL SIGNAL BIPOLAR TRANSISTOR

RF TRANS NPN 9V 14GHZ SC75

RF TRANS NPN 4.7V 37GHZ TSLP-3

RF TRANS NPN 15V 1.3GHZ TO72

RF FET LDMOS 135V 28DB SOT1121A

RF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor

RF Power Field-Effect Transistor

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF FET LDMOS 65V 16DB SOT1112A

RF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Trans RF FET N-CH 89V 3-Pin LDMOST Bulk

RF Power Field-Effect Transistor