RF Power Field-Effect Transistors

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

25-W RF Power GaN HEMT

GAN HEMT FET 28V 35W DC-4.0GHZ

RF Power Field-Effect Transistor

RF Power Field-Effect Transistor

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET

120-W; 1800 – 2300-MHz; GaN HEMT for WCDMA; LTE; WiMAX

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET

15-W; 28-V; GaN HEMT for Linear Communications ranging from VHF to 3 GHz

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET

RF MOSFET HEMT 28V 440196

RF MOSFET HEMT 50V 440162

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET

30-W; 5500 – 5800-MHz; 28-V; GaN HEMT for WiMAX

30 W; DC - 6.0 GHz; GaN HEMT

RF MOSFET HEMT 50V 440117

500-W; 1200 – 1400-MHz; GaN HEMT for L-Band Radar Systems

50W, GAN HEMT, 50V, DC-4.0GHZ, P

50-W; 7.9 – 9.6-GHz; 50-ohm; Input/Output-Matched GaN HEMT

2-W; 20-MHz – 6000-MHz; GaN HEMT MMIC Power Amplifier

SMALL SIGNAL BIPOLAR TRANSISTOR

RF Power Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF SMALL SIGNAL BIPOLAR TRANSISTOR