RF Power Field-Effect Transistors
| 型号 | 说明 | 供应商库存 | 价格范围 | |
|---|---|---|---|---|
RF Power Field-Effect Transistor 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, N-Channel 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor 产品规格书 |
| N/A N/A | 检查供应情况 | |
L-BAND MEDIUM AND HIGH POWER GAAS FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
200W, GAN HEMT, 48V, 3400-3600MH 产品规格书 |
| N/A N/A | 检查供应情况 | |
280W, GAN HEMT, 48V, 3400-3600MH 产品规格书 |
| N/A N/A | 检查供应情况 | |
400W, GAN HEMT, 48V, 3400-3600MH 产品规格书 |
| N/A N/A | 检查供应情况 | |
| N/A N/A | 检查供应情况 | ||
280W, GAN HEMT, 48V, 2496-2690MH 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor 产品规格书 |
| N/A N/A | 检查供应情况 | |
| N/A N/A | 检查供应情况 | ||
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Transistor |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 2-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 |