RF Power Field-Effect Transistors
| 型号 | 说明 | 供应商库存 | 价格范围 | |
|---|---|---|---|---|
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF TRANS PNP 30V 30MA UB 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF MOSFET Transistors ixz210n50l2 10a 500v n channel zmos linear mosfet 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF MOSFET Transistors RF MOSFET TRANSISTORS 10A 500V 产品规格书 |
| N/A N/A | 检查供应情况 | |
BLC8G27LS-140AV,518 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF S BAND, N-CHANNEL 产品规格书 |
| $46.69770 $46.69770 | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF FET LDMOS 65V 14DB SOT975C 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF MOSFET JFET 20V TO-92 产品规格书 |
| N/A N/A | 检查供应情况 | |
FET RF 65V 880MHZ NI-780 |
| $90.20970 $90.20970 | 检查供应情况 | |
FET RF 15V 3.55GHZ |
| $30.29190 $32.48526 | 检查供应情况 | |
RF S BAND, N-CHANNEL 产品规格书 |
| $58.18620 $64.48656 | 检查供应情况 | |
RF Power Field-Effect Transistor 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF FET LDMOS 65V 19.5DB SOT502B 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF FET LDMOS 65V 18.5DB SOT502B 产品规格书 |
| N/A N/A | 检查供应情况 | |
TRANS RF NPN 33V 1.1A 244-04 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET 产品规格书 |
| $138.02850 $138.02850 | 检查供应情况 | |
120-W; RF Power GaN HEMT 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor 产品规格书 |
| N/A N/A | 检查供应情况 |