RF Power Field-Effect Transistors

MOSFET N-CH 8V 40MA SOT343

JFET 30V 10mA

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Junction FET

10-W RF Power GaN HEMT

30-W; 8.0-GHz; GaN HEMT Die

RF MOSFET HEMT 28V 6QFN

6-W; DC - 15.0 GHz; 40-V; GaN HEMT

RF MOSFET HEMT 28V 440196

30-W; 5500 – 5800-MHz; 28-V; GaN HEMT for WiMAX

RF Power Field-Effect Transistor, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET

180-W; DC - 2 GHz; GaN HEMT

RF Power Field-Effect Transistor

15 W; DC - 6.0 GHz; 50 V; GaN HEMT

350 W; 5200 to 5900-MHz; 50-Ohm Input/Output-Matched; GaN HEMT

RF MOSFET HEMT 50V 440162

120W, GAN HEMT, 50V, 3.1-3.5GHZ,

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

240W GAN HEMT 28V 2.7-3.1GHZ FET

240-W; 2700 – 3100-MHz; 50-ohm Input/Output Matched GaN HEMT for S-Band Radar Systems

CLF1G0035-100 - 100W BROADBAND R

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET