Power Field-Effect Transistors

1200 V, 14 mΩ, Gen 3+, Automotive qualified, Bare Die SiC MOSFET

Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 0.28A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 4A I(D), 30V, 0.067ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 20A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 6.3A I(D), 60V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 8.5A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 7.2A I(D), 30V, 0.024ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 3A I(D), 20V, 0.118ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 45A I(D), 20V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Power Field-Effect Transistor, 7A I(D), 30V, 0.021ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 3.5A I(D), 60V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-169AC

Power Field-Effect Transistor, 10.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 50A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

High Power RF GaN on SiC HEMT 700 W; 50 V; 960 – 1215 MHz

TRANSISTOR/RF Power Transistor, GaN HEMT

High Power RF GaN on SiC HEMT; 600W; 50V; 1200MHz to 1400MHz

Power Field-Effect Transistor

Power Field-Effect Transistor, 18A I(D), 0.11ohm, 1-Element, P-Channel, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 5A I(D), 60V, 0.34ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 5A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET