Diodes Incorporated ZXMS6008DN8-13 | 搜芯易Sourcengine

Diodes Incorporated ZXMS6008DN8-13

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
60V Dual N-Channel Self-Protected Enhancement Mode
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G8
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1.67
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Avalanche Energy Rating (Eas) (mJ)
210
Pulsed Drain Current-Max (IDM) (A)
1.8
Drain-source On Resistance-Max (ohm)
0.8
Screening Level / Reference Standard
AEC-Q101; IATF 16949