Diodes Incorporated ZXMHC10A07N8TC | 搜芯易Sourcengine

Diodes Incorporated ZXMHC10A07N8TC

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET 2N/2P-CH 100V 0.8A 8SO
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G8
Configuration
2 N and 2 P-Channel (Half Bridge)
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
4
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (W)
1.36
Drain Current-Max (ID) (A)
0.8
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Drain-source On Resistance-Max (ohm)
0.7
Time@Peak Reflow Temperature-Max (s)
30