Diodes Incorporated ZXMC3A16DN8QTA | 搜芯易Sourcengine

Diodes Incorporated ZXMC3A16DN8QTA

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET N/P-CH 30V 6.4A/5.4A 8SO
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G8
Configuration
N and P-Channel Complementary
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Terminal Finish
MATTE TIN
Terminal Position
DUAL
Additional Feature
HIGH RELIABILITY
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (W)
2.1
Drain Current-Max (ID) (A)
6.4
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
30
Feedback Cap-Max (Crss) (pF)
84
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
30
Drain-source On Resistance-Max (ohm)
0.035
Screening Level / Reference Standard
AEC-Q101; MIL-STD-202
Time@Peak Reflow Temperature-Max (s)
30