Diodes Incorporated ZTX657 | 搜芯易Sourcengine

Diodes Incorporated ZTX657

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Bipolar (BJT) Single Transistor, NPN, 300 V, 500 mA, 1 W, E-Line, Through Hole
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-W3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
WIRE
J-STD-609 Code
e3
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
50
Power Dissipation-Max (W)
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
0.5
Operating Temperature-Max (Cel)
200
Collector-emitter Voltage-Max (V)
300
Transition Frequency-Nom (fT) (MHz)
30
Time@Peak Reflow Temperature-Max (s)
30