Toshiba Corporation YTS2221TE85L | 搜芯易Sourcengine

Toshiba Corporation YTS2221TE85L

生命周期状态
Discontinued
说明
RF Small Signal Bipolar Transistor, 0.6A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-236
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
1.6 V
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
JEDEC-95 Code
TO-236
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
20
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.6 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
30 V
Transition Frequency-Nom (fT)
250 MHz
Collector-base Capacitance-Max
8 pF