Yangjie Electronic Technology YJJ03G10AF2 | 搜芯易Sourcengine

Yangjie Electronic Technology YJJ03G10AF2

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 3A I(D), 110V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G6
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
3
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
110
Feedback Cap-Max (Crss) (pF)
1.4
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
8
Pulsed Drain Current-Max (IDM) (A)
12
Drain-source On Resistance-Max (ohm)
0.14