Yangjie Electronic Technology YJG70P03AF1 | 搜芯易Sourcengine

Yangjie Electronic Technology YJG70P03AF1

生命周期状态
Active-Unconfirmed
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 70A I(D), 30V, 0.0095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PDSO-F8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
70 A
Transistor Application
SWITCHING
Feedback Cap-Max (Crss)
477 pF
DS Breakdown Voltage-Min
30 V
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-55 Cel
Power Dissipation-Max (Abs)
89 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
360 mJ
Power Dissipation Ambient-Max
7.4 W
Drain-source On Resistance-Max
0.0095 ohm
Pulsed Drain Current-Max (IDM)
500 A