Yangjie Electronic Technology YJ12N65CMB1 | 搜芯易Sourcengine

Yangjie Electronic Technology YJ12N65CMB1

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 11.5A I(D), 650V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
11.5
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
277
DS Breakdown Voltage-Min (V)
650
Feedback Cap-Max (Crss) (pF)
28
Turn-off Time-Max (toff) (ns)
490
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
590
Pulsed Drain Current-Max (IDM) (A)
46
Drain-source On Resistance-Max (ohm)
0.75