WeEn Semiconductors Co., Ltd. WMS30N050VJ | 搜芯易Sourcengine

WeEn Semiconductors Co., Ltd. WMS30N050VJ

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 45A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
42
Drain Current-Max (ID) (A)
45
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
30
Feedback Cap-Max (Crss) (pF)
217
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
39
Pulsed Drain Current-Max (IDM) (A)
180
Drain-source On Resistance-Max (ohm)
0.008
Screening Level / Reference Standard
IEC-60134