WHITE ELECTRONIC DESIGNS CORP WEDPN4M72V-125BM | 搜芯易Sourcengine

WHITE ELECTRONIC DESIGNS CORP WEDPN4M72V-125BM

生命周期状态
Discontinued
说明
Synchronous DRAM Module, 4MX72, 6ns, CMOS, PBGA219
类别
Semiconductors Memory ICs DRAMs SYNCHRONOUS DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.28
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Access Mode
FOUR BANK PAGE BURST
JESD-30 Code
R-PBGA-B219
Memory Width
72
Organization
4MX72
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
301989888 bit
Memory IC Type
SYNCHRONOUS DRAM MODULE
Operating Mode
SYNCHRONOUS
Refresh Cycles
4096
Terminal Pitch
1.27 mm
Access Time-Max
6 ns
Number of Ports
1
Number of Words
4194304 words
Seated Height-Max
2.2 mm
Temperature Grade
MILITARY
Terminal Position
BOTTOM
Additional Feature
AUTO REFRESH
Supply Current-Max
700 mA
Number of Functions
1
Number of Terminals
219
Standby Current-Max
0.225 Amp
Number of Words Code
4M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Package Equivalence Code
BGA219,16X16,50
Operating Temperature-Max
125 Cel
Operating Temperature-Min
-55 Cel
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Clock Frequency-Max (fCLK)
125 MHz
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED