Microsemi Corporation WEDPN16M64V-125BI | 搜芯易Sourcengine

Microsemi Corporation WEDPN16M64V-125BI

生命周期状态
Transferred
REACH
REACH compliant
说明
Synchronous DRAM Module, 16MX64, 6ns, CMOS, PBGA219
类别
Semiconductors Memory ICs DRAMs SYNCHRONOUS DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

Technology
CMOS
Access Mode
FOUR BANK PAGE BURST
JESD-30 Code
S-PBGA-B219
Memory Width
64
Package Code
BGA
Self Refresh
YES
Package Shape
SQUARE
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
SYNCHRONOUS DRAM MODULE
Operating Mode
SYNCHRONOUS
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
16MX64
Number of Functions
1
Number of Terminals
219
Access Time-Max (ns)
6
Number of Words Code
16M
Memory Density (bits)
1073741824
Package Body Material
PLASTIC/EPOXY
Alternate Memory Width
32
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
3
Supply Voltage-Nom (V)
3.3
Number of Words (words)
16777216
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED