Microsemi Corporation WEDPN16M64V-125B3I | 搜芯易Sourcengine

Microsemi Corporation WEDPN16M64V-125B3I

生命周期状态
Transferred
REACH
REACH compliant
说明
Synchronous DRAM, 16MX64, 6ns, CMOS, PBGA219
类别
Semiconductors Memory ICs DRAMs SYNCHRONOUS DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

Technology
CMOS
Width (mm)
21.1
Access Mode
FOUR BANK PAGE BURST
Length (mm)
21.1
JESD-30 Code
S-PBGA-B219
Memory Width
64
Package Code
BGA
Self Refresh
YES
Package Shape
SQUARE
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
SYNCHRONOUS DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED
Memory Organization
16MX64
Number of Functions
1
Number of Terminals
219
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
6
Number of Words Code
16M
Memory Density (bits)
1073741824
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
2.64
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
3
Supply Voltage-Nom (V)
3.3
Number of Words (words)
16777216
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40