WED3EG72M18S403JD3ISG
Microsemi Corporation
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明DDR DRAM Module, 16MX72, 0.7ns, CMOS
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- TechnologyCMOS
- Access ModeFOUR BANK PAGE BURST
- JESD-30 CodeR-XDMA-N184
- Memory Width72
- Organization16MX72
- Package CodeDIMM
- Self RefreshYES
- JESD-609 Codee4
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density1207959552 bit
- Memory IC TypeDDR DRAM MODULE
- Operating ModeSYNCHRONOUS
- Access Time-Max0.7 ns
- Number of Ports1
- Number of Words16777216 words
- Terminal FinishGOLD
- Temperature GradeINDUSTRIAL
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH
- Number of Functions1
- Number of Terminals184
- Number of Words Code16M
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Max (Vsup)2.7 V
- Supply Voltage-Min (Vsup)2.5 V
- Supply Voltage-Nom (Vsup)2.6 V
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WED3EG72M18S403JD3ISG