WED3DL324V7BI
Microsemi Corporation
- 生命周期状态Discontinued
- REACHREACH compliant
- 说明Synchronous DRAM Module, 4MX32, 5.4ns, CMOS, PBGA119
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- Width14 mm
- Length22 mm
- TechnologyCMOS
- Access ModeFOUR BANK PAGE BURST
- JESD-30 CodeR-PBGA-B119
- Memory Width32
- Organization4MX32
- Package CodeBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density134217728 bit
- Memory IC TypeSYNCHRONOUS DRAM MODULE
- Operating ModeSYNCHRONOUS
- Terminal Pitch1.27 mm
- Access Time-Max5.4 ns
- Number of Ports1
- Number of Words4194304 words
- Seated Height-Max2.79 mm
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Number of Functions1
- Number of Terminals119
- Number of Words Code4M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Max (Vsup)3.6 V
- Supply Voltage-Min (Vsup)3 V
- Supply Voltage-Nom (Vsup)3.3 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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WED3DL324V7BI