Winbond Electronics Corporation W989D2CBJX6E | 搜芯易Sourcengine

Winbond Electronics Corporation W989D2CBJX6E

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR DRAM, 16MX32, 5.4ns, CMOS, PBGA90
类别
Semiconductors Memory ICs DRAMs DDR DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.28
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Width (mm)
8
Access Mode
FOUR BANK PAGE BURST
Length (mm)
13
JESD-30 Code
R-PBGA-B90
Memory Width
32
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
OTHER
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
16MX32
Number of Functions
1
Number of Terminals
90
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
5.4
Number of Words Code
16M
Memory Density (bits)
536870912
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.025
Supply Voltage-Max (V)
1.95
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
16777216
Sequential Burst Length
1,2,4,8,FP
Standby Current-Max (A)
1.0E-5
Supply Current-Max (mA)
75
Interleaved Burst Length
1,2,4,8
Package Equivalence Code
BGA90,9X15,32
Clock Frequency-Max (MHz)
166
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-25
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED