W66BL6NBUAGI
Winbond Electronics Corporation
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明DRAM Chip Mobile LPDDR4 SDRAM 2Gbit 128Mx16 1.1V/1.8V 200-Pin WFBGA
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)10
- Access ModeMULTI BANK PAGE BURST
- Length (mm)14.5
- JESD-30 CodeR-PBGA-B200
- Memory Width16
- Package CodeVFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeLPDDR4 DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY VOLTAGE
- Memory Organization128MX16
- Number of Functions1
- Number of Terminals200
- Terminal Pitch (mm)0.8
- Number of Words Code128M
- Memory Density (bits)2147483648
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)0.8
- Supply Voltage-Max (V)1.17
- Supply Voltage-Min (V)1.06
- Supply Voltage-Nom (V)1.1
- Number of Words (words)134217728
- Sequential Burst Length16,32
- Interleaved Burst Length16,32
- Package Equivalence CodeBGA200,12X20,32/25
- Clock Frequency-Max (MHz)1869.1
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)95
- Operating Temperature-Min (Cel)-40
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
W66BL6NBUAGI有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
W66BL6NBUAGI