Microsemi Corporation W3J512M36K-1066B2M | 搜芯易Sourcengine

Microsemi Corporation W3J512M36K-1066B2M

生命周期状态
Transferred
REACH
REACH compliant
说明
DDR3L DRAM, 512MX36, CMOS, PBGA204
类别
Semiconductors Memory ICs DRAMs DDR3L DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Technology
CMOS
Width (mm)
10.1
Access Mode
SINGLE BANK PAGE BURST
Length (mm)
14.6
JESD-30 Code
R-PBGA-B204
Memory Width
36
Package Code
FBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR3L DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Temperature Grade
MILITARY
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED
Memory Organization
512MX36
Number of Functions
1
Number of Terminals
204
Terminal Pitch (mm)
0.8
Number of Words Code
512M
Memory Density (bits)
19327352832
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
3.75
Supply Voltage-Max (V)
1.45
Supply Voltage-Min (V)
1.283
Supply Voltage-Nom (V)
1.35
Number of Words (words)
536870912
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55