W3HG264M64EEU665D4IG
Microsemi Corporation
- 生命周期状态Discontinued
- 说明DDR DRAM Module, 128MX64, 0.45ns, CMOS, PDMA200
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDMA-N200
- Memory Width64
- Organization128MX64
- Package CodeDIMM
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density8589934592 bit
- Memory IC TypeDDR DRAM MODULE
- Refresh Cycles8192
- Terminal Pitch0.6 mm
- Access Time-Max0.45 ns
- Number of Words134217728 words
- Temperature GradeINDUSTRIAL
- Terminal PositionDUAL
- Supply Current-Max1272 mA
- Number of Terminals200
- Standby Current-Max0.112 Amp
- Number of Words Code128M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeDIMM200,24
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Nom (Vsup)1.8 V
- Clock Frequency-Max (fCLK)333 MHz
W3HG264M64EEU665D4IG有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
W3HG264M64EEU665D4IG