W3HG2128M72EEU665PD4IG
Microsemi Corporation
- 生命周期状态Transferred
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明DDR DRAM Module, 256MX72, 0.45ns, CMOS, PDMA200
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDMA-N200
- Memory Width72
- Package CodeDIMM
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory IC TypeDDR DRAM MODULE
- Refresh Cycles8192
- DLA QualificationNot Qualified
- Temperature GradeINDUSTRIAL
- Terminal PositionDUAL
- Memory Organization256MX72
- Number of Terminals200
- Terminal Pitch (mm)0.6
- Access Time-Max (ns)0.45
- Number of Words Code256M
- Memory Density (bits)19327352832
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Number of Words (words)268435456
- Standby Current-Max (A)0.126
- Supply Current-Max (mA)3870
- Package Equivalence CodeDIMM200,24
- Clock Frequency-Max (MHz)333
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
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W3HG2128M72EEU665PD4IG