W3HG2128M64EEU805DD4SG
Microsemi Corporation
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明DDR DRAM Module, 256MX64, 0.4ns, CMOS, PDMA200
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDMA-N200
- Memory Width64
- Organization256MX64
- Package CodeDIMM
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density17179869184 bit
- Memory IC TypeDDR DRAM MODULE
- Refresh Cycles8192
- Terminal Pitch0.6 mm
- Access Time-Max0.4 ns
- Number of Words268435456 words
- Temperature GradeOTHER
- Terminal PositionDUAL
- Supply Current-Max2480 mA
- Number of Terminals200
- Standby Current-Max0.24 Amp
- Number of Words Code256M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeDIMM200,24
- Operating Temperature-Max85 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Nom (Vsup)1.8 V
- Clock Frequency-Max (fCLK)400 MHz
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W3HG2128M64EEU805DD4SG