Microsemi Corporation W3H64M16E-667B2I | 搜芯易Sourcengine

Microsemi Corporation W3H64M16E-667B2I

生命周期状态
Transferred
REACH
REACH compliant
说明
DDR2 DRAM, 64MX16, 0.65ns, CMOS, PBGA79
类别
Semiconductors Memory ICs DRAMs DDR2 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

Technology
CMOS
Width (mm)
11.1
Access Mode
MULTI BANK PAGE BURST
Length (mm)
14.1
JESD-30 Code
R-PBGA-B79
Memory Width
16
Package Code
BGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR2 DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED
Memory Organization
64MX16
Number of Functions
1
Number of Terminals
79
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
0.65
Number of Words Code
64M
Memory Density (bits)
1073741824
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
2.42
Supply Voltage-Max (V)
1.9
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
67108864
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40