Microsemi Corporation W3H264M16E-667SBC | 搜芯易Sourcengine

Microsemi Corporation W3H264M16E-667SBC

生命周期状态
Discontinued
说明
DDR2 DRAM, 128MX16, 0.65ns, CMOS, PBGA79
类别
Semiconductors Memory ICs DRAMs DDR2 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Width
11.1 mm
Length
14.1 mm
Technology
CMOS
Access Mode
DUAL BANK PAGE BURST
JESD-30 Code
R-PBGA-B79
Memory Width
16
Organization
128MX16
Package Code
BGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
2147483648 bit
Memory IC Type
DDR2 DRAM
Operating Mode
SYNCHRONOUS
Terminal Pitch
1.27 mm
Access Time-Max
0.65 ns
Number of Ports
1
Number of Words
134217728 words
Seated Height-Max
2.87 mm
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED
Number of Functions
1
Number of Terminals
79
Number of Words Code
128M
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V