MERCURY SYSTEMS INC W3H264M16E-400B2M | 搜芯易Sourcengine

MERCURY SYSTEMS INC W3H264M16E-400B2M

生命周期状态
Active
REACH
REACH compliant
说明
DDR2 DRAM, 128MX16, 0.8ns, CMOS, PBGA79
类别
Semiconductors Memory ICs DRAMs DDR2 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Technology
CMOS
Width (mm)
11.1
Access Mode
DUAL BANK PAGE BURST
Length (mm)
14.1
JESD-30 Code
R-PBGA-B79
Memory Width
16
Package Code
BGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
DDR2 DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Terminal Finish
Tin/Lead (Sn63Pb37)
Temperature Grade
MILITARY
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED
Memory Organization
128MX16
Number of Functions
1
Number of Terminals
79
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
0.8
Number of Words Code
128M
Memory Density (bits)
2147483648
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
2.42
Supply Voltage-Max (V)
1.9
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
134217728
Moisture Sensitivity Level
3
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55