Microsemi Corporation W3EG72129S265JD3 | 搜芯易Sourcengine

Microsemi Corporation W3EG72129S265JD3

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
DDR DRAM Module, 128MX8, 0.75ns, CMOS
类别
Semiconductors Memory ICs DRAMs DDR DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

Width
3.81 mm
Length
133.48 mm
Technology
CMOS
Access Mode
DUAL BANK PAGE BURST
JESD-30 Code
S-PBGA-B107
Memory Width
8
Organization
128MX8
Package Code
DIMM
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
NO LEAD
Memory Density
1073741824 bit
Memory IC Type
DDR DRAM MODULE
Operating Mode
SYNCHRONOUS
Access Time-Max
0.75 ns
Number of Ports
1
Number of Words
134217728 words
Seated Height-Max
30.48 mm
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH; LG-MAX; WD-MAX
Number of Functions
1
Number of Terminals
184
Number of Words Code
128M
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED