Microsemi Corporation W3E64M72S-333BI | 搜芯易Sourcengine

Microsemi Corporation W3E64M72S-333BI

生命周期状态
Transferred
REACH
REACH compliant
说明
Synchronous DRAM, 64MX72, 0.7ns, CMOS, PBGA219
类别
Semiconductors Memory ICs DRAMs SYNCHRONOUS DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Technology
CMOS
Access Mode
FOUR BANK PAGE BURST
JESD-30 Code
R-PBGA-B219
Memory Width
72
Package Code
BGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
SYNCHRONOUS DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
64MX72
Number of Functions
1
Number of Terminals
219
Access Time-Max (ns)
0.7
Number of Words Code
64M
Memory Density (bits)
4831838208
Package Body Material
PLASTIC/EPOXY
Supply Voltage-Max (V)
2.7
Supply Voltage-Min (V)
2.3
Supply Voltage-Nom (V)
2.5
Number of Words (words)
67108864
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED