W3E64M16S-333NBI
Microsemi Corporation
- 生命周期状态Transferred
- REACHREACH compliant
- 说明DDR1 DRAM, 64MX16, 0.7ns, CMOS, PBGA60
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- TechnologyCMOS
- Width (mm)10
- Access ModeFOUR BANK PAGE BURST
- Length (mm)12.5
- JESD-30 CodeR-PBGA-B60
- Memory Width16
- Package CodeLBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, LOW PROFILE Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR1 DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- DLA QualificationNot Qualified
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization64MX16
- Number of Functions1
- Number of Terminals60
- Terminal Pitch (mm)1
- Access Time-Max (ns)0.7
- Number of Words Code64M
- Memory Density (bits)1073741824
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)1.5
- Supply Voltage-Max (V)2.7
- Supply Voltage-Min (V)2.3
- Supply Voltage-Nom (V)2.5
- Number of Words (words)67108864
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
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W3E64M16S-333NBI