WHITE ELECTRONIC DESIGNS CORP W3E32M64S-250BI | 搜芯易Sourcengine

WHITE ELECTRONIC DESIGNS CORP W3E32M64S-250BI

生命周期状态
Transferred
说明
DDR1 DRAM, 32MX64, 0.8ns, CMOS, PBGA219
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Access Mode
FOUR BANK PAGE BURST
JESD-30 Code
S-PBGA-B219
Memory Width
64
Package Code
BGA
Self Refresh
YES
Package Shape
SQUARE
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
DDR1 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
32MX64
Number of Functions
1
Number of Terminals
219
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
0.8
Number of Words Code
32M
Memory Density (bits)
2147483648
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
2.03
Supply Voltage-Max (V)
2.7
Supply Voltage-Min (V)
2.3
Supply Voltage-Nom (V)
2.5
Number of Words (words)
33554432
Standby Current-Max (A)
0.02
Supply Current-Max (mA)
1620
Package Equivalence Code
BGA219,16X16,50
Clock Frequency-Max (MHz)
125
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40