WHITE ELECTRONIC DESIGNS CORP W3DG63126V7D2G | 搜芯易Sourcengine

WHITE ELECTRONIC DESIGNS CORP W3DG63126V7D2G

生命周期状态
Transferred
RoHS
符合RoHS标准
说明
Synchronous DRAM Module, 128MX64, 5.4ns, CMOS
类别
Semiconductors Memory ICs DRAMs SYNCHRONOUS DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Technology
CMOS
Access Mode
DUAL BANK PAGE BURST
JESD-30 Code
R-XDMA-N168
Memory Width
64
Package Code
DIMM
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory IC Type
SYNCHRONOUS DRAM MODULE
Operating Mode
SYNCHRONOUS
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
AUTO/SELF REFRESH
Memory Organization
128MX64
Number of Functions
1
Number of Terminals
168
Access Time-Max (ns)
5.4
Number of Words Code
128M
Memory Density (bits)
8589934592
Package Body Material
UNSPECIFIED
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
3
Supply Voltage-Nom (V)
3.3
Number of Words (words)
134217728
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED