IXYS Corporation W-IRFC254 | 搜芯易Sourcengine

IXYS Corporation W-IRFC254

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XUUC-N2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
DS Breakdown Voltage-Min
250 V
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.14 ohm