Vishay Intertechnology, Inc. VS-GT80DA120U | 搜芯易Sourcengine

Vishay Intertechnology, Inc. VS-GT80DA120U

生命周期状态
Active
RoHS
符合RoHS标准
说明
Trans IGBT Module N-CH 1200V 139A 658W 4-Pin SOT-227
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PUFM-X4
Configuration
Single
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
658
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
199
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
436
Collector Current-Max (IC) (A)
139
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
7
Collector-emitter Voltage-Max (V)
1200
Screening Level / Reference Standard
UL RECOGNIZED