Vishay Intertechnology, Inc. VS-GT50TP120N | 搜芯易Sourcengine

Vishay Intertechnology, Inc. VS-GT50TP120N

生命周期状态
EOL
RoHS
符合RoHS标准
说明
IGBT MOD 1200V 100A INT-A-PAK
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X7
Configuration
Half Bridge
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
7
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
405
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
344
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Nom (toff) (ns)
548
Collector Current-Max (IC) (A)
100
Operating Temperature-Max (Cel)
175
Gate-emitter Thr Voltage-Max (V)
7.5
Collector-emitter Voltage-Max (V)
1200
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED