Viking Technology, Inc. VR9FU126428HBGYZT | 搜芯易Sourcengine

Viking Technology, Inc. VR9FU126428HBGYZT

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR4 DRAM Module, 512MX64, CMOS
类别
Semiconductors Memory ICs DRAMs DDR4 DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
3.7
Access Mode
SINGLE BANK PAGE BURST
Length (mm)
69.6
JESD-30 Code
R-XDMA-N260
Memory Width
64
Package Code
DIMM
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory IC Type
DDR4 DRAM MODULE
Operating Mode
SYNCHRONOUS
Number of Ports
1
Temperature Grade
INDUSTRIAL
Terminal Position
DUAL
Additional Feature
AUTO/SELF REFRESH; WD-MAX
Memory Organization
512MX64
Number of Functions
1
Number of Terminals
260
Number of Words Code
512M
Memory Density (bits)
34359738368
Package Body Material
UNSPECIFIED
Seated Height-Max (mm)
30.0127
Supply Voltage-Max (V)
1.26
Supply Voltage-Min (V)
1.14
Supply Voltage-Nom (V)
1.2
Number of Words (words)
536870912
Sequential Burst Length
8
Interleaved Burst Length
8
Clock Frequency-Max (MHz)
933
Operating Temperature-Max (Cel)
55
Operating Temperature-Min (Cel)
-40