VISHAY SILICONIX VQ1001J-1 | 搜芯易Sourcengine

VISHAY SILICONIX VQ1001J-1

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 0.83A I(D), 30V, 1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDIP-T14
Configuration
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
4
Number of Terminals
14
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.83 A
Turn-on Time-Max (ton)
30 ns
Feedback Cap-Max (Crss)
35 pF
DS Breakdown Voltage-Min
30 V
Turn-off Time-Max (toff)
30 ns
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Drain-source On Resistance-Max
1 ohm
Pulsed Drain Current-Max (IDM)
3 A