VISHAY SILICONIX VP0300B-2 | 搜芯易Sourcengine

VISHAY SILICONIX VP0300B-2

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 1.25A I(D), 30V, 2.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-MBCY-W3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-205AD
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
1.25 A
Turn-on Time-Max (ton)
30 ns
Feedback Cap-Max (Crss)
60 pF
DS Breakdown Voltage-Min
30 V
Turn-off Time-Max (toff)
30 ns
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Drain-source On Resistance-Max
2.5 ohm
Pulsed Drain Current-Max (IDM)
3 A