Broadcom Inc. VMMK-1225-TR1G | 搜芯易Sourcengine

Broadcom Inc. VMMK-1225-TR1G

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF JFET Transistors LNA FET in Microcap DC-18GHz
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

JESD-30 Code
R-XDCC-N8
Configuration
SINGLE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Finish
TIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Power Gain-Min (Gp)
8.7 dB
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.05 A
Highest Frequency Band
L BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
5 V
Moisture Sensitivity Level
1
Transistor Element Material
GALLIUM ARSENIDE
Peak Reflow Temperature (Cel)
260
Power Dissipation Ambient-Max
0.25 W